2-清除标志位
* @brief Clears the FLASH's pending flags. * @param FLASH_FLAG: specifies the FLASH flags to clear. * This parameter can be any combination of the following values: * @arg FLASH_FLAG_EOP: FLASH End of Operation flag * @arg FLASH_FLAG_OPERR: FLASH operation Error flag * @arg FLASH_FLAG_WRPERR: FLASH Write protected error flag * @arg FLASH_FLAG_PGAERR: FLASH Programming Alignment error flag * @arg FLASH_FLAG_PGPERR: FLASH Programming Parallelism error flag * @arg FLASH_FLAG_PGSERR: FLASH Programming Sequence error flag * @arg FLASH_FLAG_RDERR: FLASH Read Protection error flag (STM32F42xx/43xxx and STM32F401xx/411xE devices) * @retval None */ void FLASH_ClearFlag(uint32_t FLASH_FLAG) { /* Check the parameters */ assert_param(IS_FLASH_CLEAR_FLAG(FLASH_FLAG)); /* Clear the flags */ FLASH->SR = FLASH_FLAG; }
3-擦除
STM32 擦除可以按照块擦除、扇区擦除、擦除全部扇区这三种情况，从上面就能理解这三个的不同
/** * @brief Erases a specified FLASH Sector. * * @note If an erase and a program operations are requested simultaneously, * the erase operation is performed before the program one. * * @param FLASH_Sector: The Sector number to be erased. * * @note For STM32F405xx/407xx and STM32F415xx/417xx devices this parameter can * be a value between FLASH_Sector_0 and FLASH_Sector_11. * * For STM32F42xxx/43xxx devices this parameter can be a value between * FLASH_Sector_0 and FLASH_Sector_23. * * For STM32F401xx devices this parameter can be a value between * FLASH_Sector_0 and FLASH_Sector_5. * * For STM32F411xE devices this parameter can be a value between * FLASH_Sector_0 and FLASH_Sector_7. * * @param VoltageRange: The device voltage range which defines the erase parallelism. * This parameter can be one of the following values: * @arg VoltageRange_1: when the device voltage range is 1.8V to 2.1V, * the operation will be done by byte (8-bit) * @arg VoltageRange_2: when the device voltage range is 2.1V to 2.7V, * the operation will be done by half word (16-bit) * @arg VoltageRange_3: when the device voltage range is 2.7V to 3.6V, * the operation will be done by word (32-bit) * @arg VoltageRange_4: when the device voltage range is 2.7V to 3.6V + External Vpp, * the operation will be done by double word (64-bit) * * @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM, * FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE. */ FLASH_Status FLASH_EraseSector(uint32_t FLASH_Sector, uint8_t VoltageRange) { uint32_t tmp_psize = 0x0; FLASH_Status status = FLASH_COMPLETE; /* Check the parameters */ assert_param(IS_FLASH_SECTOR(FLASH_Sector)); assert_param(IS_VOLTAGERANGE(VoltageRange)); if(VoltageRange == VoltageRange_1) { tmp_psize = FLASH_PSIZE_BYTE; } else if(VoltageRange == VoltageRange_2) { tmp_psize = FLASH_PSIZE_HALF_WORD; } else if(VoltageRange == VoltageRange_3) { tmp_psize = FLASH_PSIZE_WORD; } else { tmp_psize = FLASH_PSIZE_DOUBLE_WORD; } /* Wait for last operation to be completed */ status = FLASH_WaitForLastOperation(); if(status == FLASH_COMPLETE) { /* if the previous operation is completed, proceed to erase the sector */ FLASH->CR &= CR_PSIZE_MASK; FLASH->CR |= tmp_psize; FLASH->CR &= SECTOR_MASK; FLASH->CR |= FLASH_CR_SER | FLASH_Sector; FLASH->CR |= FLASH_CR_STRT; /* Wait for last operation to be completed */ status = FLASH_WaitForLastOperation(); /* if the erase operation is completed, disable the SER Bit */ FLASH->CR &= (~FLASH_CR_SER); FLASH->CR &= SECTOR_MASK; } /* Return the Erase Status */ return status; } /** * @brief Erases all FLASH Sectors. * * @note If an erase and a program operations are requested simultaneously, * the erase operation is performed before the program one. * * @param VoltageRange: The device voltage range which defines the erase parallelism. * This parameter can be one of the following values: * @arg VoltageRange_1: when the device voltage range is 1.8V to 2.1V, * the operation will be done by byte (8-bit) * @arg VoltageRange_2: when the device voltage range is 2.1V to 2.7V, * the operation will be done by half word (16-bit) * @arg VoltageRange_3: when the device voltage range is 2.7V to 3.6V, * the operation will be done by word (32-bit) * @arg VoltageRange_4: when the device voltage range is 2.7V to 3.6V + External Vpp, * the operation will be done by double word (64-bit) * * @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM, * FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE. */ FLASH_Status FLASH_EraseAllSectors(uint8_t VoltageRange) { uint32_t tmp_psize = 0x0; FLASH_Status status = FLASH_COMPLETE; /* Wait for last operation to be completed */ status = FLASH_WaitForLastOperation(); assert_param(IS_VOLTAGERANGE(VoltageRange)); if(VoltageRange == VoltageRange_1) { tmp_psize = FLASH_PSIZE_BYTE; } else if(VoltageRange == VoltageRange_2) { tmp_psize = FLASH_PSIZE_HALF_WORD; } else if(VoltageRange == VoltageRange_3) { tmp_psize = FLASH_PSIZE_WORD; } else { tmp_psize = FLASH_PSIZE_DOUBLE_WORD; } if(status == FLASH_COMPLETE) { /* if the previous operation is completed, proceed to erase all sectors */ #if defined(STM32F427_437xx) || defined(STM32F429_439xx) FLASH->CR &= CR_PSIZE_MASK; FLASH->CR |= tmp_psize; FLASH->CR |= (FLASH_CR_MER1 | FLASH_CR_MER2); FLASH->CR |= FLASH_CR_STRT; /* Wait for last operation to be completed */ status = FLASH_WaitForLastOperation(); /* if the erase operation is completed, disable the MER Bit */ FLASH->CR &= ~(FLASH_CR_MER1 | FLASH_CR_MER2); #endif /* STM32F427_437xx || STM32F429_439xx */ #if defined(STM32F40_41xxx) || defined(STM32F401xx) || defined(STM32F411xE) || defined(STM32F446xx) FLASH->CR &= CR_PSIZE_MASK; FLASH->CR |= tmp_psize; FLASH->CR |= FLASH_CR_MER; FLASH->CR |= FLASH_CR_STRT; /* Wait for last operation to be completed */ status = FLASH_WaitForLastOperation(); /* if the erase operation is completed, disable the MER Bit */ FLASH->CR &= (~FLASH_CR_MER); #endif /* STM32F40_41xxx || STM32F401xx || STM32F411xE || STM32F446xx */ } /* Return the Erase Status */ return status; } /** * @brief Erases all FLASH Sectors in Bank 1. * * @note This function can be used only for STM32F42xxx/43xxx devices. * * @note If an erase and a program operations are requested simultaneously, * the erase operation is performed before the program one. * * @param VoltageRange: The device voltage range which defines the erase parallelism. * This parameter can be one of the following values: * @arg VoltageRange_1: when the device voltage range is 1.8V to 2.1V, * the operation will be done by byte (8-bit) * @arg VoltageRange_2: when the device voltage range is 2.1V to 2.7V, * the operation will be done by half word (16-bit) * @arg VoltageRange_3: when the device voltage range is 2.7V to 3.6V, * the operation will be done by word (32-bit) * @arg VoltageRange_4: when the device voltage range is 2.7V to 3.6V + External Vpp, * the operation will be done by double word (64-bit) * * @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM, * FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE. */ FLASH_Status FLASH_EraseAllBank1Sectors(uint8_t VoltageRange) { uint32_t tmp_psize = 0x0; FLASH_Status status = FLASH_COMPLETE; /* Wait for last operation to be completed */ status = FLASH_WaitForLastOperation(); assert_param(IS_VOLTAGERANGE(VoltageRange)); if(VoltageRange == VoltageRange_1) { tmp_psize = FLASH_PSIZE_BYTE; } else if(VoltageRange == VoltageRange_2) { tmp_psize = FLASH_PSIZE_HALF_WORD; } else if(VoltageRange == VoltageRange_3) { tmp_psize = FLASH_PSIZE_WORD; } else { tmp_psize = FLASH_PSIZE_DOUBLE_WORD; } if(status == FLASH_COMPLETE) { /* if the previous operation is completed, proceed to erase all sectors */ FLASH->CR &= CR_PSIZE_MASK; FLASH->CR |= tmp_psize; FLASH->CR |= FLASH_CR_MER1; FLASH->CR |= FLASH_CR_STRT; /* Wait for last operation to be completed */ status = FLASH_WaitForLastOperation(); /* if the erase operation is completed, disable the MER Bit */ FLASH->CR &= (~FLASH_CR_MER1); } /* Return the Erase Status */ return status; } /** * @brief Erases all FLASH Sectors in Bank 2. * * @note This function can be used only for STM32F42xxx/43xxx devices. * * @note If an erase and a program operations are requested simultaneously, * the erase operation is performed before the program one. * * @param VoltageRange: The device voltage range which defines the erase parallelism. * This parameter can be one of the following values: * @arg VoltageRange_1: when the device voltage range is 1.8V to 2.1V, * the operation will be done by byte (8-bit) * @arg VoltageRange_2: when the device voltage range is 2.1V to 2.7V, * the operation will be done by half word (16-bit) * @arg VoltageRange_3: when the device voltage range is 2.7V to 3.6V, * the operation will be done by word (32-bit) * @arg VoltageRange_4: when the device voltage range is 2.7V to 3.6V + External Vpp, * the operation will be done by double word (64-bit) * * @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM, * FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE. */ FLASH_Status FLASH_EraseAllBank2Sectors(uint8_t VoltageRange) { uint32_t tmp_psize = 0x0; FLASH_Status status = FLASH_COMPLETE; /* Wait for last operation to be completed */ status = FLASH_WaitForLastOperation(); assert_param(IS_VOLTAGERANGE(VoltageRange)); if(VoltageRange == VoltageRange_1) { tmp_psize = FLASH_PSIZE_BYTE; } else if(VoltageRange == VoltageRange_2) { tmp_psize = FLASH_PSIZE_HALF_WORD; } else if(VoltageRange == VoltageRange_3) { tmp_psize = FLASH_PSIZE_WORD; } else { tmp_psize = FLASH_PSIZE_DOUBLE_WORD; } if(status == FLASH_COMPLETE) { /* if the previous operation is completed, proceed to erase all sectors */ FLASH->CR &= CR_PSIZE_MASK; FLASH->CR |= tmp_psize; FLASH->CR |= FLASH_CR_MER2; FLASH->CR |= FLASH_CR_STRT; /* Wait for last operation to be completed */ status = FLASH_WaitForLastOperation(); /* if the erase operation is completed, disable the MER Bit */ FLASH->CR &= (~FLASH_CR_MER2); } /* Return the Erase Status */ return status; }
4-编程（数据写入）
注意：STM32写入可以按照字、半字、字节单位写入（这点记住每个厂商写入的字节数有的并不相同，像华大的就和这不太一样）
* @brief 在指定地址上编程双字(64位)。
@note This function must be used when the device voltage range is from * 2.7V to 3.6V and an External Vpp is present. * * @note If an erase and a program operations are requested simultaneously, * the erase operation is performed before the program one. * * @param Address: specifies the address to be programmed. * @param Data: specifies the data to be programmed. * @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM, * FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE. */ FLASH_Status FLASH_ProgramDoubleWord(uint32_t Address, uint64_t Data) { FLASH_Status status = FLASH_COMPLETE; /* Check the parameters */ assert_param(IS_FLASH_ADDRESS(Address)); /* Wait for last operation to be completed */ status = FLASH_WaitForLastOperation(); if(status == FLASH_COMPLETE) { /* if the previous operation is completed, proceed to program the new data */ FLASH->CR &= CR_PSIZE_MASK; FLASH->CR |= FLASH_PSIZE_DOUBLE_WORD; FLASH->CR |= FLASH_CR_PG; *(__IO uint64_t*)Address = Data; /* Wait for last operation to be completed */ status = FLASH_WaitForLastOperation(); /* if the program operation is completed, disable the PG Bit */ FLASH->CR &= (~FLASH_CR_PG); } /* Return the Program Status */ return status; } /** * @brief 在指定地址编程一个字(32位)。 * * @note This function must be used when the device voltage range is from 2.7V to 3.6V. * * @note If an erase and a program operations are requested simultaneously, * the erase operation is performed before the program one. * * @param Address: specifies the address to be programmed. * This parameter can be any address in Program memory zone or in OTP zone. * @param Data: specifies the data to be programmed. * @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM, * FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE. */ FLASH_Status FLASH_ProgramWord(uint32_t Address, uint32_t Data) { FLASH_Status status = FLASH_COMPLETE; /* Check the parameters */ assert_param(IS_FLASH_ADDRESS(Address)); /* Wait for last operation to be completed */ status = FLASH_WaitForLastOperation(); if(status == FLASH_COMPLETE) { /* if the previous operation is completed, proceed to program the new data */ FLASH->CR &= CR_PSIZE_MASK; FLASH->CR |= FLASH_PSIZE_WORD; FLASH->CR |= FLASH_CR_PG; *(__IO uint32_t*)Address = Data; /* Wait for last operation to be completed */ status = FLASH_WaitForLastOperation(); /* if the program operation is completed, disable the PG Bit */ FLASH->CR &= (~FLASH_CR_PG); } /* Return the Program Status */ return status; } /** * @brief 在指定地址上编程半字(16位)。 * @note This function must be used when the device voltage range is from 2.1V to 3.6V. * * @note If an erase and a program operations are requested simultaneously, * the erase operation is performed before the program one. * * @param Address: specifies the address to be programmed. * This parameter can be any address in Program memory zone or in OTP zone. * @param Data: specifies the data to be programmed. * @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM, * FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE. */ FLASH_Status FLASH_ProgramHalfWord(uint32_t Address, uint16_t Data) { FLASH_Status status = FLASH_COMPLETE; /* Check the parameters */ assert_param(IS_FLASH_ADDRESS(Address)); /* Wait for last operation to be completed */ status = FLASH_WaitForLastOperation(); if(status == FLASH_COMPLETE) { /* if the previous operation is completed, proceed to program the new data */ FLASH->CR &= CR_PSIZE_MASK; FLASH->CR |= FLASH_PSIZE_HALF_WORD; FLASH->CR |= FLASH_CR_PG; *(__IO uint16_t*)Address = Data; /* Wait for last operation to be completed */ status = FLASH_WaitForLastOperation(); /* if the program operation is completed, disable the PG Bit */ FLASH->CR &= (~FLASH_CR_PG); } /* Return the Program Status */ return status; } /** * @brief 在指定地址编程序一个字节(8位)。 * @note This function can be used within all the device supply voltage ranges. * * @note If an erase and a program operations are requested simultaneously, * the erase operation is performed before the program one. * * @param Address: specifies the address to be programmed. * This parameter can be any address in Program memory zone or in OTP zone. * @param Data: specifies the data to be programmed. * @retval FLASH Status: The returned value can be: FLASH_BUSY, FLASH_ERROR_PROGRAM, * FLASH_ERROR_WRP, FLASH_ERROR_OPERATION or FLASH_COMPLETE. */ FLASH_Status FLASH_ProgramByte(uint32_t Address, uint8_t Data) { FLASH_Status status = FLASH_COMPLETE; /* Check the parameters */ assert_param(IS_FLASH_ADDRESS(Address)); /* Wait for last operation to be completed */ status = FLASH_WaitForLastOperation(); if(status == FLASH_COMPLETE) { /* if the previous operation is completed, proceed to program the new data */ FLASH->CR &= CR_PSIZE_MASK; FLASH->CR |= FLASH_PSIZE_BYTE; FLASH->CR |= FLASH_CR_PG; *(__IO uint8_t*)Address = Data; /* Wait for last operation to be completed */ status = FLASH_WaitForLastOperation(); /* if the program operation is completed, disable the PG Bit */ FLASH->CR &= (~FLASH_CR_PG); } /* Return the Program Status */ return status; }
5- 上锁
* @brief Locks the FLASH control register access * @param None * @retval None */ void FLASH_Lock(void) { /* Set the LOCK Bit to lock the FLASH Registers access */ FLASH->CR |= FLASH_CR_LOCK; }
所以根据以上总结如下步骤（严格来说中间还有一些过程，但是常用的就这几步骤，当然库函数不知这几个，还有获得标志位什么的，这点后面再讲）。
(1) 调用 FLASH_Unlock 解锁；
(2) 调用 FLASH_ClearFlag 清除各种标志位；
(3) 根据起始地址及结束地址计算要擦除的扇区；
(4) 调用 FLASH_EraseSector （或FLASH_EraseAllSectors、FLASH_EraseAllBank1Sectors、FLASH_EraseAllBank2Sectors，一般情况下都是按照扇区删除，有时也会按照块删除）擦除扇区，擦除时按字为单位进行操作；
(5) 调用 FLASH_ProgramWord（或其他都可以） 函数向起始地址至结束地址的存储区域都写入数值
(6) 调用 FLASH_Lock 上锁；
(7) 使用指针读取数据内容并校验。
咱们来看一下官网给出的例子
例子
/* 解锁Flash *********************************************************/ /* 启用flash控制寄存器访问 */ FLASH_Unlock(); /* 擦除用户Flash区域************************************************/ /* area defined by FLASH_USER_START_ADDR and FLASH_USER_END_ADDR */ /* 清除挂起的标志(如果有) */ FLASH_ClearFlag(FLASH_FLAG_EOP | FLASH_FLAG_OPERR | FLASH_FLAG_WRPERR | FLASH_FLAG_PGAERR | FLASH_FLAG_PGPERR|FLASH_FLAG_PGSERR); /* 获取开始扇区和结束扇区的数量 */ uwStartSector = GetSector(FLASH_USER_START_ADDR); uwEndSector = GetSector(FLASH_USER_END_ADDR); /*开始擦除操作 */ uwSectorCounter = uwStartSector; while (uwSectorCounter <= uwEndSector) { /* 设备电压范围假定为[2.7V ~ 3.6V]，操作将通过字完成*/ if (FLASH_EraseSector(uwSectorCounter, VoltageRange_3) != FLASH_COMPLETE) { /* 扇区擦除时发生错误。. 用户可以在这里添加一些代码来处理这个错误 */ while (1) { } } /* 跳到下一个扇区 */ if (uwSectorCounter == FLASH_Sector_11) { uwSectorCounter += 40; } else { uwSectorCounter += 8; } } /* 按照字写入Flash区 ********************************/ /* area defined by FLASH_USER_START_ADDR and FLASH_USER_END_ADDR */ uwAddress = FLASH_USER_START_ADDR; while (uwAddress < FLASH_USER_END_ADDR) { if (FLASH_ProgramWord(uwAddress, DATA_32) == FLASH_COMPLETE) { uwAddress = uwAddress + 4; } else { /* Error occurred while writing data in Flash memory. User can add here some code to deal with this error */ while (1) { } } } /* Lock the Flash to disable the flash control register access (recommended to protect the FLASH memory against possible unwanted operation) */ FLASH_Lock();
还有一些下章介绍。
